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Электронный компонент: ZC835ATA

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1
S E M I C O N D U C T O R S
ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series
Device description
A range of silicon varactor diodes for use in
frequency control and filtering. Featuring closely
controlled CV characteristics and high Q. Low
reverse current ensures very low phase noise
performance. Available in single or dual common
cathode format in a wide rage of miniature surface
mount packages.
Features
Close tolerance C-V characteristics
High tuning ratio
Low IR (typically 200pA)
Excellent phase noise performance
High Q
Range of miniature surface mount packages
Applications
VCXO and TCXO
Wireless communications
Pagers
Mobile radio
*Where steeper CV slopes are required there is the 12V hyperabrupt range.
ZC930, ZMV930, ZV930, ZV931 Series
830 SERIES
ISSUE 8 - MARCH 2005
SILICON 25V HYPERABRUPT VARACTOR DIODES
SOT323
SOT23
SOD523
SOD323
830 SERIES
S E M I C O N D U C T O R S
ISSUE 8 - MARCH 2005
2
PART
Capacitance (pF)
V
R
=2V, f=1MHz
Min Q
V
R
=3V
f=50MHz
Capacitance Ratio
C
2
/ C
20
at f=1MHz
MIN.
NOM.
MAX.
MIN.
MAX.
829A
7.38
8.2
9.02
250
4.3
5.8
829B
7.79
8.2
8.61
250
4.3
5.8
830A
9.0
10.0
11.0
300
4.5
6.0
830B
9.5
10.0
10.5
300
4.5
6.0
831A
13.5
15.0
16.5
300
4.5
6.0
831B
14.25
15.0
15.75
300
4.5
6.0
832A
19.8
22.0
24.2
200
5.0
6.5
832B
20.9
22.0
23.1
200
5.0
6.5
833A
29.7
33.0
36.3
200
5.0
6.5
833B
31.35
33.0
34.65
200
5.0
6.5
834A
42.3
47.0
51.7
200
5.0
6.5
834B
44.65
47.0
49.35
200
5.0
6.5
835A
61.2
68.0
74.8
100
5.0
6.5
835B
64.6
68.0
71.4
100
5.0
6.5
836A
90.0
100.0
110.0
100
5.0
6.5
TUNING CHARACTERISTICS at Tamb = 25
C
PARAMETER
SYMBOL
MAX
UNIT
Forward current
I
F
200
mA
Power dissipation at T
amb
= 25 C SOT23
P
tot
330
mW
Power dissipation at T
amb
= 25 C SOD323
P
tot
330
mW
Power dissipation at T
amb
= 25 C SOD523
P
tot
250
mW
Operating and storage temperature range
-55 to +150
C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Reverse breakdown voltage
I
R
= 10uA
25
V
Reverse voltage leakage
V
R
= 20V
0.2
20
nA
Temperature coefficient of capacitance
V
R
= 3V, f = 1MHz
300
400
ppCm/ C
ELECTRICAL CHARACTERISTICS at Tamb = 25
C
830 SERIES
S E M I C O N D U C T O R S
ISSUE 8 - MARCH 2005
3
TYPICAL CHARACTERISTICS
830 SERIES
S E M I C O N D U C T O R S
ISSUE 8 - MARCH 2005
4
O
R
D
E
R
C
O
D
E
S
A
N
D
P
A
R
T
M
A
R
K
I
N
G
S
O
T
2
3
S
O
D
3
2
3
S
O
D
5
2
3
S
O
T
2
3
S
O
T
3
2
3
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R
D
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C
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D
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A
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T
M
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A
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T
M
A
R
K
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D
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R
C
O
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P
A
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T
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A
R
K
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R
D
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R
C
O
D
E
P
A
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T
M
A
R
K
O
R
D
E
R
C
O
D
E
P
A
R
T
M
A
R
K
Z
C
8
2
9
A
T
A
J
9
A
Z
M
V
8
2
9
A
T
A
A
A
Z
C
8
2
9
B
T
A
J
9
B
Z
M
V
8
2
9
B
T
A
C
A
Z
C
8
3
0
A
T
A
J
1
A
Z
M
V
8
3
0
A
T
A
A
B
Z
C
8
3
0
B
T
A
J
1
B
Z
M
V
8
3
0
B
T
A
C
B
Z
C
8
3
1
A
T
A
J
3
A
Z
M
V
8
3
1
A
T
A
A
C
Z
C
8
3
1
B
T
A
J
3
B
Z
M
V
8
3
1
B
T
A
C
C
Z
V
8
3
1
B
V
2
T
A
8
1
Z
M
D
C
8
3
1
B
T
A
C
C
Z
C
8
3
2
A
T
A
J
4
A
Z
M
V
8
3
2
A
T
A
A
D
Z
C
8
3
2
B
T
A
J
4
B
Z
M
V
8
3
2
B
T
A
C
D
Z
V
8
3
2
B
V
2
T
A
8
2
Z
M
D
C
8
3
2
B
T
A
C
D
Z
C
8
3
3
A
T
A
J
2
A
Z
M
V
8
3
3
A
T
A
A
E
Z
D
C
8
3
3
A
T
A
C
2
A
Z
C
8
3
3
B
T
A
J
2
B
Z
M
V
8
3
3
B
T
A
C
E
Z
C
8
3
4
A
T
A
J
5
A
Z
M
V
8
3
4
A
T
A
A
F
Z
D
C
8
3
4
A
T
A
C
5
A
Z
C
8
3
4
B
T
A
J
5
B
Z
M
V
8
3
4
B
T
A
C
F
Z
C
8
3
5
A
T
A
J
6
A
Z
M
V
8
3
5
A
T
A
A
G
Z
C
8
3
5
B
T
A
J
6
B
Z
M
V
8
3
5
B
T
A
C
G
R
E
E
L
C
O
D
E
R
E
E
L
S
I
Z
E
T
A
P
E
W
I
D
T
H
Q
U
A
N
T
I
T
Y
P
E
R
R
E
E
L
T
A
7
i
n
c
h
(
1
8
0
m
m
)
8
m
m
3
0
0
0
T
C
1
3
i
n
c
h
(
3
3
0
m
m
)
8
m
m
1
0
0
0
0
T
A
P
E
A
N
D
R
E
E
L
I
N
F
O
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A
T
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o
r
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s
h
o
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a
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T
A
w
h
i
c
h
i
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f
o
r
7
i
n
c
h
r
e
e
l
s
.
F
o
r
1
3
i
n
c
h
r
e
e
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s
u
b
s
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t
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e
.
830 SERIES
S E M I C O N D U C T O R S
ISSUE 8 - MARCH 2005
5
DIM
Millimeters
Inches
Min
Max
Min
Max
A
2.67
3.05
0.105
0.120
B
1.20
1.40
0.047
0.055
C
1.10
0.043
D
0.37
0.53
0.0145
0.021
F
0.085
0.15
0.0033
0.0059
G
NOM 1.9
NOM 0.075
K
0.01
0.10
0.0004
0.004
L
2.10
2.50
0.0825
0.0985
SOT23 PACKAGE DIMENSIONS
SOT323 PACKAGE DIMENSIONS
DIM
Millimeters
Inches
Min
Max
Min
Max
A
0.91
1.16
0.036
0.046
B
0.0
0.1
0.0
0.004
D
0.33
0.4
0.013
0.016
E
0.127
0.2
0.005
0.008
F
1.52
1.77
0.060
0.070
G
1.11
1.37
0.044
0.054